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| SEMICONDUCTOR HGTG40N60B3 70A, 600V, UFS Series N-Channel IGBT Package JEDEC STYLE TO-247 E C G PRELIMINARY May 1995 Features * 70A, 600V at TC = +25 C * Square Switching SOA Capability * Typical Fall Time - 160ns at +150oC * Short Circuit Rating * Low Conduction Loss o Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG40N60B3 PACKAGE TO-247 BRAND G40N60B3 E Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G NOTE: When ordering, use the entire part number. Formerly Developmental Type TA49052 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTG40N60B3 600 600 70 40 330 20 30 160A at 0.8 BVCES 290 2.33 -40 to +150 260 2 10 UNITS V V A A A V V W W/oC oC oC s s Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage, RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous At TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TC = +150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TC = +125oC, RGE = 25. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1995 File Number 3943 9-3 Specifications HGTG40N60B3 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current SYMBOL BVCES ICES TEST CONDITIONS ICE = 250A, VGE = 0V VCE = BVCES VCE = BVCES Collector-Emitter Saturation Voltage VCE(SAT) ICE = 40A VGE = 15V TJ = +25oC TJ = +150oC TJ = +25oC TJ = +150oC TJ = +25oC MIN 600 3.0 TYP 1.4 1.5 5 MAX 250 7.5 2.0 2.3 6.0 UNITS V A mA V V V Gate-Emitter Threshold Voltage VGE(TH) ICE = 250A, VCE = VGE VGE = 20V Gate-Emitter Leakage Current Latching Current IGES IL 160 - 300 - nA A TJ = +150oC VCE(PK) = 0.8 BVCES VGE = 15V RG = 3 L = 45H ICE = 40A, VCE = 0.5 BVCES ICE = 40A, VCE = 0.5 BVCES VGE = 15V VGE = 20V Gate-Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) - 8.0 240 350 50 40 350 160 1400 3300 - 320 450 435 200 0.43 V nC nC ns ns ns ns J J oC/W Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 1) Thermal Resistance NOTE: tD(ON)I tRI tD(OFF)I tFI EON EOFF RJC TJ = +150oC ICE = 40A VCE(PK) = 0.8 BVCES VGE = 15V RG = 3 L = 100H 1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG40N60B3 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 9-4 HGTG40N60B3 Typical Performance Curves ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 200 180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) 12 TC = TC = +150 C o PULSE DURATION = 250s, DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = +25oC 200 180 160 140 120 9V 100 80 60 8.0V 40 7.5V 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 7.0V 8.5V 9.5V VGE = 15V 12V 10V +25oC TC = -40oC FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS PULSE DURATION = 250s, DUTY CYCLE <0.5%, VGE = 15V ICE, DC COLLECTOR CURRENT (A) 90 80 70 60 50 40 30 20 10 0 25 DIE LIMIT VGE = 15V PACKAGE LIMIT ICE, COLLECTOR-EMITTER CURRENT (A) 100 200 150 TC = -40oC TC = +25oC 100 TC = +150oC 50 0 0 1 2 3 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4 50 75 100 (oC) 125 150 TC , CASE TEMPERATURE FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE FREQUENCY = 1MHz 14 12 C, CAPACITANCE (nF) 10 8 6 4 COSS 2 CRSS 0 0 5 10 15 20 25 CISS VCE , COLLECTOR - EMITTER VOLTAGE (V) 600 IG(REF) = 4.06mA, RL = 7.5, TC = +25oC 20 VGE, GATE-EMITTER VOLTAGE (V) 450 BVCE = 600V 15 300 10 BVCE = 400V 150 BVCE = 200V 5 0 0 50 100 150 200 QG , GATE CHARGE (nC) 0 250 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE FIGURE 6. GATE CHARGE WAVEFORMS 9-5 HGTG40N60B3 Typical Performance Curves 100 tD(ON)I , TURN-ON DELAY TIME (ns) 70 50 (Continued) TJ = +150oC, RG = 3, L = 100H TJ = +150oC, RG = 3, L = 100H tD(OFF)I , TURN-OFF DELAY TIME (ns) 400 350 300 VCE(PK) = 480V, VGE = 15V 250 30 20 10 10 20 30 40 50 60 70 80 90 100 200 10 20 ICE , COLLECTOR-EMITTER CURRENT (A) 30 40 50 60 70 80 90 ICE , COLLECTOR-EMITTER CURRENT (A) 100 FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT TJ = +150oC, RG = 3, L = 100H FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT TJ = +150oC, RG = 3, L = 100H 1000 500 tFI , FALL TIME (ns) 300 200 100 50 30 20 VCE(PK) = 480V, VGE = 15V 100 tRI , TURN-ON RISE TIME (ns) 70 50 VCE(PK) = 480V, VGE = 15V 30 20 10 10 10 20 30 40 50 60 70 80 90 100 ICE , COLLECTOR-EMITTER CURRENT (A) 20 40 60 80 ICE , COLLECTOR-EMITTER CURRENT (A) 100 FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT TJ = +150oC, RG = 3, L = 100H FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT TJ = +150oC, RG = 3, L = 100H 5 4 VCE(PK) = 480V, VGE = 15V 3 2 1 EOFF , TURN-OFF ENERGY LOSS (mJ) 6 EON , TURN-ON ENERGY LOSS (mJ) 10 8 VCE(PK) = 480V, VGE = 15V 6 4 2 0 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100 ICE , COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 9-6 HGTG40N60B3 Typical Performance Curves 200 fMAX , OPERATING FREQUENCY (kHz) 100 50 (Continued) TC = +150oC, VGE = 15V, RG = 3, L = 45H TJ = +150oC, TC = +75oC, VGE = +15V, RG = 3, L = 100H ICE, COLLECTOR-EMITTER CURRENT (A) 200 160 20 10 5 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 0.43oC/W 20 30 50 70 100 120 80 40 2 1 10 0 0 100 200 300 400 500 600 VCE, COLLECTOR-EMITTER VOLTAGE (V) ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 14. SWITCHING SAFE OPERATING AREA ZJC , NORMALIZED THERMAL 100 0.5 RESPONSE (oC/W) 0.2 10-1 0.1 PD 0.05 t1 0.02 0.01 10-2 10-5 SINGLE PULSE t2 NOTES: DUTY FACTOR, D = t1 /t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 100 101 10-4 10-3 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE Test Circuit and Waveforms L = 100H VGE 90% 10% EOFF EON RHRP3060 RG = 3 + VCE 90% VDD = 480V ICE 10% tD(OFF)I - tFI tRI tD(ON)I FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 17. SWITCHING TEST WAVEFORMS 9-7 HGTG40N60B3 Operating Frequency Information Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 17. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX . tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 17. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation of EOFF; i.e.the collector current equals zero (ICE = 0). Handling Precautions for IGBT's Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT's are currently being extensively used in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. Trademark Emerson and Cumming, Inc. 9-8 |
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